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| August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 @ VGS = -4.5 V RDS(ON) = 1.5 @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other wise noted FDV304P -25 -8 Units V V A - Continuous - Pulsed -0.46 -1.5 0.35 -55 to 150 6.0 Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) W C kV THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient 357 C/W (c) 1997 Fairchild Semiconductor Corporation FDV304P Rev.E1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 oC VDS = -20 V, VGS = 0 V TJ = 55C IGSS Gate - Body Leakage Current (Note) -25 -22 -1 -10 -100 V mV /o C A A nA mV /o C -1.5 1.5 1.1 2 A V BVDSS/TJ IDSS VGS = -8 V, VDS= 0 V ID = -250 A, Referenced to 25 oC VDS = VGS, ID = -250 A VGS = -2.7 V, ID = -0.25 A VGS = -4.5 V, ID = -0.5 A TJ =125C -0.65 2.1 -0.86 1.22 0.87 1.21 -0.5 -1 0.8 ON CHARACTERISTICS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current VGS = -2.7 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID= -0.5 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz Forward Transconductance S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note) 63 34 10 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -6 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 7 8 55 35 20 20 110 70 1.5 ns ns ns ns nC nC nC VDS = -5 V, ID = - 0.25 A, VGS = -4.5 V 1.1 0.32 0.25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note) -0.5 -0.89 -1.2 A V Note: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDV304P Rev.E1 Typical Electrical Characteristics -1.5 , DRAIN-SOURCE CURRENT (A) -1.6 VGS = -4.5V -3.5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -1.25 -1 -0.75 -3.0 -2.7 -2.5 -1.4 V GS = -2.0 V -1.2 -2.5 -2.7 -1 -2.0 -0.5 -0.25 0 -1.5 -3.0 -3.5 -4.0 -4.5 -0.8 I D 0 -1 -2 -3 -4 -5 -0.6 0 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 5 I D = -0.25A 1.4 R DS(on) , ON-RESISTANCE (OHM) 25C 4 V GS = -2.7V 125C I D = -0.5A 1.2 3 1 2 0.8 1 0.6 -50 -25 0 25 50 75 100 T J, JUNCTION TEMPERATURE (C) 125 150 0 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. -1 V DS = -5V I D , DRAIN CURRENT (A) -0.75 T J = -55C 25C 125C -I , REVERSE DRAIN CURRENT (A) 0.5 VGS = 0V 0.1 T J = 125C 25C -0.5 0.01 -55C -0.25 0 -0.5 -1 -1.5 -2 -2.5 V GS , GATE TO SOURCE VOLTAGE (V) -3 S 0.0001 0 0.2 0.4 0.6 0.8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV304P Rev.E1 Typical Electrical And Thermal Characteristics 5 -V GS , GATE-SOURCE VOLTAGE (V) 150 I D = -0.25A 4 VDS = 5V 10V 15V CAPACITANCE (pF) 100 Ciss 50 3 Coss 20 2 1 10 f = 1 MHz V GS = 0 V Crss 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Q g , GATE CHARGE (nC) 5 0.1 0.3 -V 0.5 1 5 10 , DRAIN TO SOURCE VOLTAGE (V) 15 25 DS Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 2 1 -I D , DRAIN CURRENT (A) 0.5 RD S( ON I )L M IT 5 1m s 10 1s 10 4 POWER (W) 0m s SINGLE PULSE R JA =357 C/W TA = 25C 3 0.1 0.05 0.02 0.01 0.1 VGS = -2.7V SINGLE PULSE R JA = 357 C/W TA = 25C 0.2 0.5 -V DS DC s 2 1 0 0.001 0.01 0.1 1 10 100 300 1 2 5 10 20 35 SINGLE PULSE TIME (SEC) , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA = 357 C/W t1 TJ - T t2 = P * R JA (t) Duty Cycle, D = t1 /t 2 A 100 300 Figure 11. Transient Thermal Response Curve. FDV304P Rev.E1 |
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